A Novel Junctionless Tunneling FET with Improved Ambipolar Current

In this paper, we propose a novel junctionless tunneling FET (J-TFET) on a uniform p+ starting junctionless FET to create an structure with reduced ambipolar current (Iamb). A P+IP+N+ charge distribution with a new design parameter, the gate-drain electrode spacing (SGD), causes effective depletion of electrons in the drain region, which noticeable reduces Iamb. Increasing the SGD, pulls up the bands near the channel-drain interface, which extends the tunneling width for tunneling to occur, and thus in turn decreases the Iamb from ۵.۳۷×۱۰-۷ A/μm to ۱.۱۴×۱۰-۱۴ A/μm. Thus, we point out that the proposed J-TFET can achieve Iamb that meets the expectation of low power logic applications, a criterion that is hardly achievable with conventional TFET (C-TFET).

کلیدواژه ها:

Ambipolar current ، tunneling barrier width ، Junctionless tunneling field effect transistors (J-TFETs) ، band-to-band tunneling (BTBT).